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Erbium-doped fiber laser passively Q-switched by an InGaAs/InP multiple quantum well saturable absorber

Identifieur interne : 008C63 ( Main/Repository ); précédent : 008C62; suivant : 008C64

Erbium-doped fiber laser passively Q-switched by an InGaAs/InP multiple quantum well saturable absorber

Auteurs : RBID : Pascal:06-0383770

Descripteurs français

Pascal (Inist)
- Laser fibre, Laser déclenché, Forme impulsion, Durée impulsion, Puits quantique multiple, Composé ternaire, Gallium arséniure, Indium arséniure, Composé binaire, Indium phosphure, Semiconducteur III-V, Absorbant saturable, Erbium ion, Intégration numérique, Fibre optique, Substrat InP, As Ga In, In P, Déclenchement passif, InGaAs/InP, InGaAs, InP, 4265, 4255W, 4260G, Fibre dopée erbium, Equation bilan transfert énergie.

English descriptors

KwdEn :
- Binary compounds, Erbium ions, Erbium-doped fiber, Fiber lasers, Gallium arsenides, III-V semiconductors, Indium arsenides, Indium phosphides, Multiple quantum well, Numerical integration, Optical fibers, Pulse shape, Pulse width, Q switched laser, Rate equation, Saturable absorbers, Ternary compounds.

Abstract

We report on the behavior of an erbium-doped fiber laser passively Q-switched by an InGaAs/InP multiple quantum well semiconductor saturable absorber. The fiber is moderately doped in erbium ions. The saturable absorber consists of 40 periods of InGaAs (8.5 nm)/InP (10 nm) grown on an InP substrate. The laser efficiency is nonlinear under Q-switch regime and unusual temporal pulse shapes with rising times lower than decay times are observed around threshold. Pulse duration is around the microsecond range. Simple arguments based on a rate-equations approach are proposed in order to explain our results. They are justified a posteriori via numerical integration of the equations. The variation of threshold level versus spectroscopic parameters has been determined and that makes a guideline for generalizing our discussion.

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Pascal:06-0383770

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Erbium-doped fiber laser passively Q-switched by an InGaAs/InP multiple quantum well saturable absorber</title>
<author><name sortKey="Lecourt, J B" uniqKey="Lecourt J">J.-B. Lecourt</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Groupe d'Optique et d'Optronique, CORIA UMR 6614, Université de Rouen, Avenue de l'Université, Site du Madrillet BP 12</s1>
<s2>76801 Saint-Etienne du Rouvray</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Haute-Normandie</region>
<settlement type="city">Saint-Etienne du Rouvray</settlement>
</placeName>
<orgName type="university">Université de Rouen</orgName>
</affiliation>
</author>
<author><name sortKey="Martel, G" uniqKey="Martel G">G. Martel</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Groupe d'Optique et d'Optronique, CORIA UMR 6614, Université de Rouen, Avenue de l'Université, Site du Madrillet BP 12</s1>
<s2>76801 Saint-Etienne du Rouvray</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>France</country>
<placeName><region type="region" nuts="2">Haute-Normandie</region>
<settlement type="city">Saint-Etienne du Rouvray</settlement>
</placeName>
<orgName type="university">Université de Rouen</orgName>
</affiliation>
</author>
<author><name sortKey="Guezo, M" uniqKey="Guezo M">M. Guezo</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Lahoratoire d'Etudes de Nanostructures Semiconductrices, INSA de Rennes, 20 Avenue des Buttes de Coësmes</s1>
<s2>35043 Rennes</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Région Bretagne</region>
<settlement type="city">Rennes</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Labbe, C" uniqKey="Labbe C">C. Labbe</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Lahoratoire d'Etudes de Nanostructures Semiconductrices, INSA de Rennes, 20 Avenue des Buttes de Coësmes</s1>
<s2>35043 Rennes</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>France</country>
<placeName><region type="region" nuts="2">Région Bretagne</region>
<settlement type="city">Rennes</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Loualiche, S" uniqKey="Loualiche S">S. Loualiche</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Lahoratoire d'Etudes de Nanostructures Semiconductrices, INSA de Rennes, 20 Avenue des Buttes de Coësmes</s1>
<s2>35043 Rennes</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Région Bretagne</region>
<settlement type="city">Rennes</settlement>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">06-0383770</idno>
<date when="2006">2006</date>
<idno type="stanalyst">PASCAL 06-0383770 INIST</idno>
<idno type="RBID">Pascal:06-0383770</idno>
<idno type="wicri:Area/Main/Corpus">008B19</idno>
<idno type="wicri:Area/Main/Repository">008C63</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0030-4018</idno>
<title level="j" type="abbreviated">Opt. commun.</title>
<title level="j" type="main">Optics communications</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term>
<term>Erbium ions</term>
<term>Erbium-doped fiber</term>
<term>Fiber lasers</term>
<term>Gallium arsenides</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Indium phosphides</term>
<term>Multiple quantum well</term>
<term>Numerical integration</term>
<term>Optical fibers</term>
<term>Pulse shape</term>
<term>Pulse width</term>
<term>Q switched laser</term>
<term>Rate equation</term>
<term>Saturable absorbers</term>
<term>Ternary compounds</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Laser fibre</term>
<term>Laser déclenché</term>
<term>Forme impulsion</term>
<term>Durée impulsion</term>
<term>Puits quantique multiple</term>
<term>Composé ternaire</term>
<term>Gallium arséniure</term>
<term>Indium arséniure</term>
<term>Composé binaire</term>
<term>Indium phosphure</term>
<term>Semiconducteur III-V</term>
<term>Absorbant saturable</term>
<term>Erbium ion</term>
<term>Intégration numérique</term>
<term>Fibre optique</term>
<term>Substrat InP</term>
<term>As Ga In</term>
<term>In P</term>
<term>Déclenchement passif</term>
<term>InGaAs/InP</term>
<term>InGaAs</term>
<term>InP</term>
<term>4265</term>
<term>4255W</term>
<term>4260G</term>
<term>Fibre dopée erbium</term>
<term>Equation bilan transfert énergie</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We report on the behavior of an erbium-doped fiber laser passively Q-switched by an InGaAs/InP multiple quantum well semiconductor saturable absorber. The fiber is moderately doped in erbium ions. The saturable absorber consists of 40 periods of InGaAs (8.5 nm)/InP (10 nm) grown on an InP substrate. The laser efficiency is nonlinear under Q-switch regime and unusual temporal pulse shapes with rising times lower than decay times are observed around threshold. Pulse duration is around the microsecond range. Simple arguments based on a rate-equations approach are proposed in order to explain our results. They are justified a posteriori via numerical integration of the equations. The variation of threshold level versus spectroscopic parameters has been determined and that makes a guideline for generalizing our discussion.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0030-4018</s0>
</fA01>
<fA02 i1="01"><s0>OPCOB8</s0>
</fA02>
<fA03 i2="1"><s0>Opt. commun.</s0>
</fA03>
<fA05><s2>263</s2>
</fA05>
<fA06><s2>1</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Erbium-doped fiber laser passively Q-switched by an InGaAs/InP multiple quantum well saturable absorber</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>LECOURT (J.-B.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>MARTEL (G.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>GUEZO (M.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>LABBE (C.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>LOUALICHE (S.)</s1>
</fA11>
<fA14 i1="01"><s1>Groupe d'Optique et d'Optronique, CORIA UMR 6614, Université de Rouen, Avenue de l'Université, Site du Madrillet BP 12</s1>
<s2>76801 Saint-Etienne du Rouvray</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Lahoratoire d'Etudes de Nanostructures Semiconductrices, INSA de Rennes, 20 Avenue des Buttes de Coësmes</s1>
<s2>35043 Rennes</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA20><s1>71-83</s1>
</fA20>
<fA21><s1>2006</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>14750</s2>
<s5>354000142476220140</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2006 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>46 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>06-0383770</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Optics communications</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We report on the behavior of an erbium-doped fiber laser passively Q-switched by an InGaAs/InP multiple quantum well semiconductor saturable absorber. The fiber is moderately doped in erbium ions. The saturable absorber consists of 40 periods of InGaAs (8.5 nm)/InP (10 nm) grown on an InP substrate. The laser efficiency is nonlinear under Q-switch regime and unusual temporal pulse shapes with rising times lower than decay times are observed around threshold. Pulse duration is around the microsecond range. Simple arguments based on a rate-equations approach are proposed in order to explain our results. They are justified a posteriori via numerical integration of the equations. The variation of threshold level versus spectroscopic parameters has been determined and that makes a guideline for generalizing our discussion.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B40B55W</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B40B60G</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B40B65</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Laser fibre</s0>
<s5>11</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Fiber lasers</s0>
<s5>11</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Laser déclenché</s0>
<s5>12</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Q switched laser</s0>
<s5>12</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Laser disparado</s0>
<s5>12</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Forme impulsion</s0>
<s5>41</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Pulse shape</s0>
<s5>41</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Forma impulsión</s0>
<s5>41</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Durée impulsion</s0>
<s5>42</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Pulse width</s0>
<s5>42</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Duración impulso</s0>
<s5>42</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Puits quantique multiple</s0>
<s5>47</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Multiple quantum well</s0>
<s5>47</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Pozo cuántico múltiple</s0>
<s5>47</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>50</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>50</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
<s5>51</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>51</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Indium arséniure</s0>
<s2>NK</s2>
<s5>52</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>52</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Composé binaire</s0>
<s5>53</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Binary compounds</s0>
<s5>53</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Indium phosphure</s0>
<s2>NK</s2>
<s5>54</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Indium phosphides</s0>
<s2>NK</s2>
<s5>54</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>55</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>55</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Absorbant saturable</s0>
<s5>61</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Saturable absorbers</s0>
<s5>61</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Erbium ion</s0>
<s2>NC</s2>
<s5>62</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Erbium ions</s0>
<s2>NC</s2>
<s5>62</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Intégration numérique</s0>
<s5>63</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Numerical integration</s0>
<s5>63</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Integración numérica</s0>
<s5>63</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Fibre optique</s0>
<s5>64</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Optical fibers</s0>
<s5>64</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Substrat InP</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>As Ga In</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>In P</s0>
<s4>INC</s4>
<s5>76</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Déclenchement passif</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>InGaAs/InP</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>85</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>86</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>4265</s0>
<s4>INC</s4>
<s5>87</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>4255W</s0>
<s4>INC</s4>
<s5>91</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>4260G</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>Fibre dopée erbium</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="26" i2="3" l="ENG"><s0>Erbium-doped fiber</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>Equation bilan transfert énergie</s0>
<s4>CD</s4>
<s5>97</s5>
</fC03>
<fC03 i1="27" i2="3" l="ENG"><s0>Rate equation</s0>
<s4>CD</s4>
<s5>97</s5>
</fC03>
<fN21><s1>254</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Erbium-doped fiber laser passively Q-switched by an InGaAs/InP multiple quantum well saturable absorber

Erbium-doped fiber laser passively Q-switched by an InGaAs/InP multiple quantum well saturable absorber

Descripteurs français

English descriptors

Abstract

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Le document en format XML

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